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For the Inventor, By the Inventor

Bengaluru, India

Rajesh Sathiyanarayanan

USPTO Granted Patents = 18 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 42(Granted Patents)


Location History:

  • Chennai, IN (2015)
  • Bengaluru, IN (2017 - 2021)

Company Filing History:

goldMedal13 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal4 out of 13,684 
 
Applied Materials, Inc.
 patents
bronzeMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):
1. 12469715 - Dry etching with etch byproduct self-cleaning (2025-11-11),
2. 11049722 - Methods and materials for modifying the threshold voltage of metal oxide stacks (2021-06-29),
3. 10615041 - Methods and materials for modifying the threshold voltage of metal oxide stacks (2020-04-07),
4. 10608097 - Low thickness dependent work-function nMOS integration for metal gate (2020-03-31),
5. 10418505 - Aerodynamic solar pods (2019-09-17),
6. 10366897 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-07-30),
7. 10347494 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-07-09),
8. 10319596 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-06-11),
9. 10170576 - Stable work function for narrow-pitch devices (2019-01-01),
10. 9984883 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2018-05-29),
11. 9972497 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2018-05-15),
12. 9735250 - Stable work function for narrow-pitch devices (2017-08-15),
13. 9705021 - Aerodynamic solar pods (2017-07-11),
14. 9627484 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer (2017-04-18),
15. 9589635 - Semiconductor device with a stoichiometric gradient (2017-03-07),

Certainly! Here is an article about inventor Rajesh Sathiyanarayanan:

Title: Rajesh Sathiyanarayanan: Pioneering Innovator Shaping the Future of Technology

Introduction:

Rajesh Sathiyanarayanan, an esteemed inventor based in Bengaluru, IN, has left an indelible mark on the world of technology with his dedication to innovation and relentless pursuit of excellence. His groundbreaking work continues to inspire the next generation of inventors worldwide.

Latest Patents:

Rajesh Sathiyanarayanan holds a remarkable 17 patents to his name. Among his latest inventions are "Methods and materials for modifying the threshold voltage of metal oxide stacks." These methods revolutionize the modification of threshold voltage in metal oxide stacks, utilizing innovative materials that provide significant shifts in threshold voltage at lower annealing temperatures.

Career Highlights:

Rajesh Sathiyanarayanan is a prominent figure at the renowned International Business Machines Corporation, known as IBM. Within IBM, he has spearheaded numerous projects that have pushed the boundaries of technological advancement. His groundbreaking research and inventive spirit have established him as a key player in the tech industry.

Collaborations:

Throughout his illustrious career, Rajesh Sathiyanarayanan has collaborated closely with esteemed colleagues such as Mohit Bajaj and Rajan K Pandey. Together, they have contributed to a multitude of innovative projects that have reshaped the landscape of technology and engineering.

Conclusion:

In conclusion, Rajesh Sathiyanarayanan's unwavering commitment to innovation and his remarkable string of patents underscore his status as a trailblazing inventor. His visionary contributions continue to shape the future of technology, inspiring inventors worldwide to reach new heights of excellence and creativity.

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