International Business Machines Corporation

Applied Materials, Inc.

Globalfoundries U.S. 2 LLC

Rajesh Sathiyanarayanan

Mohit Bajaj

Rajan K Pandey

Takashi Ando

Terence B Hook

Kota V R M Murali

Ninad D Sathaye

Paul F Ma

Atashi Basu

Siddarth A Krishnan

Aveek N Chatterjee

Rick A Hamilton, Ii

Edward J Nowak

Seshadri Ganguli

Qian Fu

Geoffrey W Burr

Sang Ho Yu

Naomi Yoshida

Shih Chung Chen

Liqi Wu

David Knapp

Lin Dong

Kumar R Virwani

Balaji Jayaraman

Mark Bell

Zhonghua Yao

A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

Dry etching with etch byproduct self-cleaning

Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

Methods and materials for modifying the threshold voltage of metal oxide stacks

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Low thickness dependent work-function nMOS integration for metal gate

A method including installing solar pods at varying heights on a tower, where a size of each of the solar pods is inversely related its installation height on the tower, each of the solar pods including a transparent ovoid enclosure symmetrical about an axis, and a reflector and a solar cell both contained within the transparent ovoid enclosure, the solar cell positioned at a common focal point of the reflector such that substantially all light reflected by the reflector is directed at the solar cell.

Aerodynamic solar pods

A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.

Stable work function for narrow-pitch devices

A solar pod system, comprising of an oval transparent enclosure. The oval transparent enclosure encapsulates a circular paraboloidal reflector mounted on solar cell. The solar cell extends over the circular parabolic reflector to place the focus of the paraboloidal reflector on the solar cell, whereby the solar cell receives light reflected by the circular parabolic reflector.

Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer

A device that includes a semiconductor device and a contact electrode with a first side that is opposite a second side. The first side abuts the semiconductor device. The contact electrode has a stoichiometry that varies from the first side to the second side. The stoichiometry of the first side inhibits the diffusion of metal from the semiconductor device into the first contact electrode.

Semiconductor device with a stoichiometric gradient

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Bengaluru, India

Rajesh Sathiyanarayanan