The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Nov. 15, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Takashi Ando, Tuckahoe, NY (US);
Mohit Bajaj, Karnatake, IN;
Terence B. Hook, Jericho, VT (US);
Rajan K. Pandey, Karnataka, IN;
Rajesh Sathiyanarayanan, Bangalore, IN;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/49 (2006.01); H01L 27/088 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28088 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/66742 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01);
Abstract
A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.