IDiyas

For the Inventor, By the Inventor

Bengaluru, India

Rajan K Pandey

USPTO Granted Patents = 18 

Average Co-Inventor Count = 5.1

ph-index = 5

Forward Citations = 51(Granted Patents)


Location History:

  • Bengaluru, IN (2013 - 2019)
  • Karnataka, IN (2017 - 2019)

Company Filing History:

goldMedal18 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2013-2019

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):
1. 10366897 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-07-30),
2. 10347494 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-07-09),
3. 10319596 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2019-06-11),
4. 10170576 - Stable work function for narrow-pitch devices (2019-01-01),
5. 9984883 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2018-05-29),
6. 9972497 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer (2018-05-15),
7. 9735250 - Stable work function for narrow-pitch devices (2017-08-15),
8. 9705079 - Tunable voltage margin access diodes (2017-07-11),
9. 9680096 - Tunable voltage margin access diodes (2017-06-13),
10. 9647210 - Tunable voltage margin access diodes (2017-05-09),
11. 9627484 - Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer (2017-04-18),
12. 9589635 - Semiconductor device with a stoichiometric gradient (2017-03-07),
13. 9583486 - Stable work function for narrow-pitch devices (2017-02-28),
14. 9508930 - Tunable voltage margin access diodes (2016-11-29),
15. 9105498 - Gate strain induced work function engineering (2015-08-11),

Title: Innovations of Rajan K Pandey

Introduction

Rajan K Pandey is a prominent inventor based in Bengaluru, India. He has made significant contributions to the field of technology, particularly in the development of advanced semiconductor devices. With a total of 18 patents to his name, his work has had a substantial impact on the industry.

Latest Patents

One of his latest patents involves devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer. This innovative method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. The threshold voltage of a transistor is adjusted by controlling the amount of strain in the liner, which in turn controls the amount of work function modulating species that diffuse into the gate dielectric in a channel region. After the adjustment, the liner is removed, showcasing a sophisticated approach to semiconductor design.

Career Highlights

Rajan K Pandey has been associated with International Business Machines Corporation (IBM), where he has played a crucial role in advancing technology through his inventions. His expertise in semiconductor technology has positioned him as a key figure in the research and development sector.

Collaborations

He has collaborated with notable colleagues such as Mohit Bajaj and Rajesh Sathiyanarayanan, contributing to various projects that push the boundaries of innovation in technology.

Conclusion

Rajan K Pandey's contributions to the field of technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence the development of advanced semiconductor devices, making a lasting impact on the industry.

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