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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9105498 B1

PDFFull Text
Expired
Date of Patent:
Aug. 11, 2015

Filed:

Mar. 01, 2012

Gate strain induced work function engineering

Applicants:

Mohit Bajaj, Bangalore, IN;

Kota V. R. M. Murali, Bangalore, IN;

Rahul Nayak, Bhopal, IN;

Edward J. Nowak, Essex Junction, VT (US);

Rajan K. Pandey, Bangalore, IN;

Inventors:

Mohit Bajaj, Bangalore, IN;

Kota V. R. M. Murali, Bangalore, IN;

Rahul Nayak, Bhopal, IN;

Edward J. Nowak, Essex Junction, VT (US);

Rajan K. Pandey, Bangalore, IN;

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Yuanmin Cai

Primary Examiner:

Angel Roman

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/82345 (2013.01); H01L 21/823412 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/7845 (2013.01);
Abstract

A stack of a gate dielectric layer and a workfunction material layer are deposited over a plurality of semiconductor material portions, which can be a plurality of semiconductor fins or a plurality of active regions in a semiconductor substrate. A first gate conductor material applying a first stress is formed on a first portion of the workfunction material layer located on a first semiconductor material portion, and a second gate conductor material applying a second stress is formed on a second portion of the workfunction material layer located on a second semiconductor material portion. The first and second stresses are different in at least one of polarity and magnitude, thereby inducing different strains in the first and second portions of the workfunction material layer. The different strains cause the workfunction shift differently in the first and second portions of the workfunction material layer, thereby providing devices having multiple different workfunctions.

Find Patent Forward Citations

Bajaj, Mohit. (2015). Gate strain induced work function engineering (U.S. Patent No. 9105498). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9105498

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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