The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhonghua Yao, Santa Clara, CA (US);

Qian Fu, Pleasanton, CA (US);

Mark J. Saly, Santa Clara, CA (US);

Yang Yang, Cupertino, CA (US);

Jeffrey W. Anthis, Redwood City, CA (US);

David Knapp, Santa Clara, CA (US);

Rajesh Sathiyanarayanan, Bengaluru, IN;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01);
Abstract

A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.


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