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For the Inventor, By the Inventor

Cupertino, CA, United States of America

Sang Ho Yu

This inventor holds 46 USPTO granted patents and 12 published patent applications, primarily in Selective Deposition. Top assignees: Applied Materials, Inc., Asm IP Holding B.v.. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang Ho Yu. Retrieved from https://idiyas.com/inventor/sang-ho-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 80.4

Average Co-Inventor Count = 4.8

ph-index = 10

Forward Citations = 1,055(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2004 - 2009)
  • Cupertino, CA (US) (2012 - 2024)

Company Filing History:

goldMedal45 out of 14,433 
 
Applied Materials, Inc.
 patents
silverMedal1 out of 1,312 
 
Asm IP Holding B.v.
 patents

Years Active: 2004-2026

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Areas of Expertise:
Selective Deposition
Gap Fill Methods
DRAM Technology
Cobalt Films
Barrier Performance
Copper Metallization
CVD Processes
Thin Films
Aluminum Oxide
Metal Gate Structures
Atomic Layer Deposition
Oxygen Free Deposition
46 patents (USPTO):Explore Patents
1. 12612694 - Methods and systems for filling gap features on substrate surfaces (2026-04-28),
2. 12431358 - Methods and materials for enhanced barrier performance and reduced via resistance (2025-09-30),
3. 12351909 - Gap fill methods using catalyzed deposition (2025-07-08),
4. 12000044 - Catalyzed deposition of metal films (2024-06-04),
5. 11894233 - Electronic device having an oxygen free platinum group metal film (2024-02-06),
6. 11680313 - Selective deposition on non-metallic surfaces (2023-06-20),
7. 11621266 - Method of testing a gap fill for DRAM (2023-04-04),
8. 11552082 - Reducing gate induced drain leakage in DRAM wordline (2023-01-10),
9. 11488830 - Oxygen free deposition of platinum group metal films (2022-11-01),
10. 11286556 - Selective deposition of titanium films (2022-03-29),
11. 11171141 - Gap fill methods of forming buried word lines in DRAM without forming bottom voids (2021-11-09),
12. 11060188 - Selective deposition of aluminum oxide on metal surfaces (2021-07-13),
13. 10930550 - Barrier for copper metallization and methods of forming (2021-02-23),
14. 10790287 - Reducing gate induced drain leakage in DRAM wordline (2020-09-29),
15. 10699946 - Method of enabling seamless cobalt gap-fill (2020-06-30),

Certainly! Here is the article about inventor Sang Ho Yu:

Title: Innovator Spotlight: Sang Ho Yu, Master of Selective Deposition

Introduction:

In the bustling tech hub of Cupertino, CA, inventor Sang Ho Yu shines brightly with his remarkable contributions to the field of electronic devices. With an impressive portfolio of 42 patents under his belt, Sang Ho Yu is a trailblazer in innovative methods of depositing platinum group metal films.

Latest Patents:

Sang Ho Yu's latest patents showcase his expertise in cutting-edge technology. One of his groundbreaking inventions includes an electronic device featuring an oxygen-free platinum group metal film. This film is achieved through methods that ensure high purity, low resistivity, and excellent conformality. Another patent focuses on selective deposition on non-metallic surfaces, enhancing the formation of metallic vias with reduced resistance.

Career Highlights:

Currently, Sang Ho Yu is a key figure at Applied Materials, Inc., a renowned company in the technology sector. His role at Applied Materials, Inc. allows him to further explore his passion for innovation and drive for excellence in the field of electronics.

Collaborations:

In his career, Sang Ho Yu has collaborated closely with esteemed colleagues such as Seshadri Ganguli and Paul F. Ma. Together, they have worked on pioneering projects that have pushed the boundaries of electronic device manufacturing.

Conclusion:

In conclusion, Sang Ho Yu's inventive spirit and dedication to advancing technology have solidified his position as a distinguished inventor in the industry. His relentless pursuit of excellence continues to shape the landscape of electronic devices, making him a true visionary in the realm of selective deposition methods.

If you have any more requests or need further information, feel free to ask!

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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