The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

May. 03, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Seshadri Ganguli, Sunnyvale, CA (US);

Sang Ho Yu, Cupertino, CA (US);

Lu Chen, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/786 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76856 (2013.01); H01L 21/02304 (2013.01); H01L 21/02362 (2013.01); H01L 21/76829 (2013.01); C23C 16/34 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01);
Abstract

Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.


Find Patent Forward Citations

Loading…