Applied Materials, Inc.

Sang Ho Yu

Seshadri Ganguli

Paul F Ma

Kai Wu

Bo Zheng

Srinivas Gandikota

Yu Lei

Mei Yin Chang

Hoon Sik Kim

Jeffrey W Anthis

Jiang Lu

Hua Ai

Avgerinos V Gelatos

Xinyu Fu

Salvador P Umotoy

Sang-Hyeob Lee

Gill Yong Lee

Sung-Kwan Kang

Michael Sterling Jackson

Hyoung-Chan Ha

Byunghoon Yoon

Feng Quan Liu

Naomi Yoshida

Wei Ti Lee

Xiaoxiong Yuan

Jacqueline S Wrench

Shih Chung Chen

Liqi Wu

Lu Chen

Bhushan N Zope

Hyman W H Lam

Yonghwa Chris Cha

Ki Hwan Yoon

Hafiz Farooq Ahmad

Ho Sun Wee

David P Thompson

Xinliang Lu

Yixiong Yang

Maitreyee Mahajani

Joshua Collins

Patricia M Liu

Wei V Tang

Kazuya Daito

Sanjay S Natarajan

Ben-Li Sheu

Wei Lei

Hougong Wang

Priyadarshi Panda

Mathew Abraham

Jorge Pablo Fernandez

Kiejin Park

Kie Jin Park

Hou Gong Wang

Rajib Lochan Swain

Xianmin Tang

Siddarth A Krishnan

Joseph F AuBuchon

Joung Joo Lee

Feng Chen

Tae Hong Ha

Glen T Mori

Benjamin Schmiege

Murali K Narasimhan

Atashi Basu

Kevin Vincent Moraes

Vikash Banthia

Rajesh Sathiyanarayanan

Lin Dong

Kavita Shah

David Michael Thompson

Xi Cen

Nobuyuki Sasaki

Weifeng Ye

Jing Zhou

Sree Rangasai V Kesapragada

Feiyue Ma

Xiaoxiong (John) Yuan

Hyman Lam

Benjamin C Wang

Fuqun Grace Vasiknanonte

Wei Min Chen

Sang Hyeob Lee

Embodiments of the disclosure relate to methods and materials for forming barrier layers with enhanced barrier performance and/or reduced via resistance. Some embodiments of the disclosure provide methods for passivating a metal surface by exposing the metal surface to a metal complex comprising an organic ligand with at least three carbon atoms and a double or triple bond that eta bonds with a central metal atom. Some embodiments provide barrier layers within vias which enable a reduction in resistance of at least 25% as a result of thinner barrier layers with equivalent barrier properties.

Methods and materials for enhanced barrier performance and reduced via resistance

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Gap fill methods using catalyzed deposition

Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

Catalyzed deposition of metal films

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Electronic device having an oxygen free platinum group metal film

Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

Selective deposition on non-metallic surfaces

Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

Method of testing a gap fill for DRAM

Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

Reducing gate induced drain leakage in DRAM wordline

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200&#xb0; C. by using an organic platinum group metal precursor.

Oxygen free deposition of platinum group metal films

Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

Selective deposition of titanium films

Gap fill methods of forming buried word lines in DRAM without forming bottom voids

Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

Selective deposition of aluminum oxide on metal surfaces

Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.

Barrier for copper metallization and methods of forming

Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Method of enabling seamless cobalt gap-fill

Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

Cobalt manganese vapor phase deposition

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Cupertino, CA, United States of America

Sang Ho Yu