The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jun. 28, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yixiong Yang, Fremont, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Steven C. H. Hung, Sunnyvale, CA (US);

Jacqueline S. Wrench, San Jose, CA (US);

Yongjing Lin, San Jose, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Wei V. Tang, Santa Clara, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76856 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01);
Abstract

Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.


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