The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Sep. 09, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jacqueline S. Wrench, San Jose, CA (US);

Yixiong Yang, Fremont, CA (US);

Yong Wu, Sunnyvale, CA (US);

Wei V. Tang, Santa Clara, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Yongjing Lin, San Jose, CA (US);

Karla M Bernal Ramos, San Jose, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H10D 30/68 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); C23C 16/06 (2013.01); C23C 16/45525 (2013.01); C23C 16/50 (2013.01); H01L 21/28568 (2013.01); H01L 21/31116 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H10D 30/6891 (2025.01); H10D 64/035 (2025.01);
Abstract

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).


Find Patent Forward Citations

Loading…