The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Sep. 30, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yixiong Yang, Santa Clara, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Yong Yang, Mountain View, CA (US);
Jacqueline S. Wrench, San Jose, CA (US);
Luping Li, Santa Clara, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/28568 (2013.01); H01L 21/477 (2013.01); H01L 21/7685 (2013.01); H01L 21/76865 (2013.01); H01L 21/76867 (2013.01);
Abstract
A method of forming a contact structure in a semiconductor device having a feature includes forming a barrier layer in the feature, wherein the barrier layer is TiN; and forming a metal layer in the feature and over the barrier layer, wherein the metal layer is at least one of aluminum (Al), ruthenium (Ru), or molybdenum (Mo).