The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Jan. 07, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Annamalai Lakshmanan, Fremont, CA (US);
Ben-Li Sheu, Sunnyvale, CA (US);
Guodan Wei, San Ramon, CA (US);
Nicole Lundy, Meridian, ID (US);
Paul F. Ma, Scottsdale, AZ (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76856 (2013.01); H01L 21/28562 (2013.01); H01L 21/76831 (2013.01); H01L 21/76841 (2013.01); H01L 21/76844 (2013.01); H01L 21/76862 (2013.01); H01L 21/76867 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.