The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Oct. 28, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Bencherki Mebarki, Santa Clara, CA (US);
Annamalai Lakshmanan, Fremont, CA (US);
Kaushal K. Singh, Santa Clara, CA (US);
Andrew Cockburn, Brussels, GB;
Ludovic Godet, Sunnyvale, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Mehul Naik, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.