The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 01, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Annamalai Lakshmanan, Fremont, CA (US);
Jacqueline S. Wrench, San Jose, CA (US);
Feihu Wang, San Jose, CA (US);
Yixiong Yang, Fremont, CA (US);
Joung Joo Lee, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H10B 12/00 (2023.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); C23C 16/45553 (2013.01); H01L 21/02491 (2013.01); H01L 21/02631 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.