Applied Materials, Inc.

Annamalai Lakshmanan

Paul F Ma

Bok Hoen Kim

Joung Joo Lee

Ben-Li Sheu

Guodan Wei

Nicole Lundy

Ludovic Godet

Srinivas Gandikota

Mehul B Naik

Ganesh Balasubramanian

Yixiong Yang

Kaushal Kishore Singh

Bencherki Mebarki

Jacqueline S Wrench

Francimar Campana Schmitt

Feihu Wang

Andrew Cockburn

Zhenjiang Cui

Albert Sanghyup Lee

Mei Yin Chang

Li-Qun Xia

Juan Carlos Rocha-Alvarez

Deenesh Padhi

Seshadri Ganguli

Ju-Hyung Lee

Daemian Raj

Mark Joseph Saly

Shankar Venkataraman

Feng Quan Liu

Anantha K Subramani

Hichem M'Saad

Avgerinos V Gelatos

Pravin K Narwankar

Dien-Yeh Wu

Zhebo Chen

Nagarajan Rajagopalan

Sukti Chatterjee

Jing Tang

David Michael Thompson

Joe Griffith Cruz

Yong Yang

Maosheng Zhao

Guojun Liu

Gang Shen

Meiyee Shek

Jennifer Meng Tseng

Troy Kim

Steven Reiter

Mei-Yee Shek Le

Sang-heum Kim

Jennifer Shan

Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Low resistivity metal contact stack

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI, where R is one or more of a C-Calkyl, C-Ccycloalkyl, C-Calkenyl, or C-Calkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Method of depositing metal films

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Methods and apparatus for processing a substrate

Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Low resistivity DRAM buried word line stack

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

Doping control of metal nitride films

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Methods for forming a metal silicide interconnection nanowire structure

Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.

Doped tantalum nitride for copper barrier applications

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.

Laminate and core shell formation of silicide nanowire

Methods for direct deposition of a metal silicide nanowire for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes positioning a substrate in a processing region of a process chamber, the substrate having a first surface comprising a non-dielectric material; and a dielectric layer formed on the first surface. An opening is formed in the dielectric layer, the opening exposing at least a portion of the first surface, the opening having sidewalls. A metal silicide seed is deposited in the opening using a PVD process, wherein the PVD process is performed with either no bias or a bias which creates deposition on the sidewall which is less than 1% of the deposition on the first surface. A metal silicide layer is then selectively deposited on the metal silicide seed using a metal-silicon organic precursor, creating the metal silicide nanowire.

Direct deposition of nickel silicide nanowire

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Fremont, CA, United States of America

Annamalai Lakshmanan