The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Dec. 18, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Bencherki Mebarki, Santa Clara, CA (US);
Annamalai Lakshmanan, Fremont, CA (US);
Kaushal K. Singh, Santa Clara, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Mehul B. Naik, San Jose, CA (US);
Andrew Cockburn, Brussels, BE;
Ludovic Godet, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.