The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Jun. 16, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Annamalai Lakshmanan, Fremont, CA (US);

Jacqueline S. Wrench, San Jose, CA (US);

Feihu Wang, San Jose, CA (US);

Yixiong Yang, Santa Clara, CA (US);

Joung Joo Lee, San Jose, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Sang-heum Kim, Mountain View, CA (US);

Zhebo Chen, San Jose, CA (US);

Gang Shen, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); C23C 16/06 (2006.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0281 (2013.01); C23C 14/021 (2013.01); C23C 14/025 (2013.01); C23C 14/0682 (2013.01); C23C 14/16 (2013.01); C23C 14/5886 (2013.01); C23C 16/0227 (2013.01); C23C 16/06 (2013.01); C23C 16/42 (2013.01); C23C 16/45527 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01);
Abstract

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.


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