Gang Shen

Title: Gang Shen: Innovator in Selective Deposition Technologies

Introduction

Gang Shen is a prominent inventor based in San Jose, CA, known for his contributions to the field of selective deposition technologies. With a total of 6 patents to his name, he has made significant advancements that enhance the efficiency and effectiveness of substrate processing.

Latest Patents

Gang Shen's latest patents include innovative methods for selective deposition. These methods describe processes that improve selectivity through an ammonia plasma pre-clean process. In certain embodiments, a silyl amine is utilized to selectively form a surfactant layer on a dielectric surface. Following this, a ruthenium film can be selectively deposited on a conductive surface. Notably, the ammonia plasma effectively removes oxide contaminations from conductive surfaces without negatively impacting the dielectric surface. Another significant patent involves methods and apparatus for processing a substrate. This includes depositing a silicide layer within a feature defined in a layer on a substrate, and forming either a metal liner layer or a metal seed layer atop the silicide layer using physical vapor deposition techniques.

Career Highlights

Gang Shen is currently employed at Applied Materials, Inc., where he continues to develop and refine his innovative technologies. His work has been instrumental in advancing the capabilities of substrate processing, making significant contributions to the semiconductor industry.

Collaborations

Gang Shen collaborates with notable colleagues, including Feng Chen and Tae Hong Ha, who contribute to the innovative environment at Applied Materials, Inc.

Conclusion

Gang Shen's work in selective deposition technologies showcases his expertise and commitment to innovation in the semiconductor field. His patents reflect a deep understanding of substrate processing, positioning him as a key figure in advancing these technologies.