The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Sep. 15, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lanlan Zhong, Santa Clara, CA (US);

Fuhong Zhang, San Jose, CA (US);

Gang Shen, San Jose, CA (US);

Feng Chen, San Jose, CA (US);

Rui Li, San Jose, CA (US);

Xiangjin Xie, Fremont, CA (US);

Tae Hong Ha, San Jose, CA (US);

Xianmin Tang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); G11B 5/31 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); C23C 16/45536 (2013.01); G11B 5/313 (2013.01); H01L 21/76871 (2013.01);
Abstract

Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.


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