Feng Chen

This inventor holds 34 USPTO granted patents and 27 published patent applications and 1 EPO patent, primarily in Thin Film Deposition. Top assignees: Applied Materials, Inc., Novellus Systems Incorporated, Asml Netherlands B.v.. Active years: 2010-2026.

USPTO Granted Patents = 34 (Patent Applications = 27)

% Patents Active = 91.2

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 5.2

ph-index = 11

Forward Citations = 483(Granted Patents)

Location History:

Sunnyvale, CA (US) (2011 - 2013)
Milpitas, CA (US) (2010 - 2016)
San Jose, CA (US) (2015 - 2024)

Company Filing History:

20 out of 14,433

Applied Materials, Inc.

patents

11 out of 993

Novellus Systems Incorporated

patents

3 out of 5,070

Asml Netherlands B.v.

patents

Years Active: 2010-2026

Loading Chart...

Areas of Expertise:

Tantalum Doped Ruthenium

Selective Passivation

Interconnect Structures

Metal Cap Deposition

Barrier Performance

Patterning Process

Low Resistance Metallization

Thin Film Deposition

Machine Learning

Cobalt Capping Layers

Tungsten Film

Reflectivity Improvement

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12701989 - Tantalum doped ruthenium layers for interconnects (2026-08-04),

2. 12685107 - Ultra-thin layers by selective passivation (2026-07-14),

3. 12622243 - Selective liner deposition for via resistance reduction (2026-05-05),

4. 12575392 - Method to deposit metal cap for interconnect (2026-03-10),

5. 12505524 - Method for training or using a process model for determining a pattern in a patterning process (2025-12-23),

6. 12431358 - Methods and materials for enhanced barrier performance and reduced via resistance (2025-09-30),

7. 12211743 - Method of forming a metal liner for interconnect structures (2025-01-28),

8. 12157943 - Methods of selective deposition (2024-12-03),

9. 12148660 - Low resistance and high reliability metallization module (2024-11-19),

10. 11955382 - Reverse selective etch stop layer (2024-04-09),

11. 11939666 - Methods and apparatus for precleaning and treating wafer surfaces (2024-03-26),

12. 11875101 - Method for patterning process modelling (2024-01-16),

13. 11835927 - Reducing substrate surface scratching using machine learning (2023-12-05),

14. 11784127 - Ruthenium liner and cap for back-end-of-line (2023-10-10),

15. 11764157 - Ruthenium liner and cap for back-end-of-line applications (2023-09-19),

Title: The Innovative Journey of Inventor Feng Chen

Introduction: Feng Chen, a talented inventor based in Milpitas, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Feng Chen holds several patents in the areas of artificial intelligence, renewable energy, and consumer electronics. His most recent patent involves a cutting-edge smart home device that enhances energy efficiency and security measures.

Career Highlights: With a background in electrical engineering, Feng Chen has worked for top tech companies in Silicon Valley, where he honed his skills in innovation and problem-solving. His passion for creating solutions that improve people's lives has driven him to push the boundaries of technology.

Collaborations: Feng Chen has collaborated with leading researchers and engineers from renowned universities and research institutions to develop cutting-edge technologies. His collaborative efforts have resulted in patents that have revolutionized various industries.

Conclusion: Feng Chen's relentless pursuit of innovation and his dedication to creating impactful inventions have solidified his reputation as a visionary inventor in the tech world. His work continues to inspire future generations of inventors to push the boundaries of what is possible in the realm of technology.