The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Dec. 03, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kevin Kashefi, San Ramon, CA (US);

Alexander Jansen, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

He Ren, San Jose, CA (US);

Lu Chen, Cupertino, CA (US);

Feng Chen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76885 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H01L 21/76829 (2013.01); H01L 21/76883 (2013.01); H01L 21/68707 (2013.01);
Abstract

Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.


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