The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Sep. 03, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Ge Qu, Sunnyvale, CA (US);
Zhiyuan Wu, San Jose, CA (US);
Feng Chen, San Jose, CA (US);
Carmen Leal Cervantes, Mountain View, CA (US);
Yong Jin Kim, Albany, CA (US);
Kevin Kashefi, San Ramon, CA (US);
Xianmin Tang, San Jose, CA (US);
Wenjing Xu, San Jose, CA (US);
Lu Chen, Cupertino, CA (US);
Tae Hong Ha, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.