Ge Qu

Title: Ge Qu: Innovator in Metal Liner Technology

Introduction

Ge Qu is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the formation of interconnect structures. His innovative approach has led to the development of a unique method that enhances device performance.

Latest Patents

Ge Qu holds a patent for a "Method of forming a metal liner for interconnect structures." This patent describes a process that involves forming a dielectric layer on a substrate, which includes features that define a gap with sidewalls and a bottom. A self-assembled monolayer (SAM) is created on the bottom of the gap, followed by the formation of a barrier layer on the SAM. The method concludes with the selective deposition of a metal liner on the barrier layer, with the SAM being removed afterward. This innovative technique is crucial for improving the reliability and efficiency of electronic devices. He has 1 patent to his name.

Career Highlights

Ge Qu is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has allowed him to focus on advancing technologies that are essential for modern electronics. His expertise in the field has positioned him as a valuable asset to the company.

Collaborations

Throughout his career, Ge Qu has collaborated with talented individuals such as Zhiyuan Wu and Feng Chen. These collaborations have fostered an environment of innovation and have contributed to the success of various projects within the company.

Conclusion

Ge Qu's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future advancements in electronic device manufacturing.