The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Jun. 01, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Xiangjin Xie, Fremont, CA (US);
Carmen Leal Cervantes, Mountain View, CA (US);
Feng Chen, San Jose, CA (US);
Lu Chen, Cupertino, CA (US);
Wenjing Xu, San Jose, CA (US);
Aravind Kamath, San Jose, CA (US);
Cheng-Hsiung Matthew Tsai, Cupertino, CA (US);
Tae Hong Ha, San Jose, CA (US);
Alexander Jansen, San Jose, CA (US);
Xianmin Tang, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.