The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Sep. 03, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Wenjing Xu, San Jose, CA (US);
Gang Shen, San Jose, CA (US);
Yufei Hu, Fremont, CA (US);
Feng Chen, San Jose, CA (US);
Tae Hong Ha, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/18 (2013.01); C23C 16/0227 (2013.01); H01L 21/02068 (2013.01); H01L 21/28568 (2013.01);
Abstract
Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.