The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Aug. 22, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Shinjae Hwang, Santa Clara, CA (US);
Feng Chen, San Jose, CA (US);
Muthukumar Kaliappan, Fremont, CA (US);
Michael Haverty, Mountain View, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); C23C 16/455 (2006.01); H10W 20/44 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01);
U.S. Cl.
CPC ...
H10W 20/4403 (2026.01); C23C 16/45525 (2013.01); H10W 20/057 (2026.01); H10W 72/01338 (2026.01); H10W 72/325 (2026.01); H10W 72/351 (2026.01);
Abstract
Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.