This inventor holds 1 USPTO granted patent and 7 published patent applications. Top assignee: Applied Materials, Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shinjae Hwang and Tantalum-Doped Ruthenium Interconnects.
Introduction
Shinjae Hwang is an inventor based in Santa Clara, California. His patent work includes a method for forming tantalum-doped ruthenium layers for electronic interconnects.
Latest Patents
Hwang is associated with 1 patent, titled “Tantalum Doped Ruthenium Layers for Interconnects.” The patent describes forming a tantalum nitride layer on a substrate, depositing a ruthenium layer over it, and exposing both layers to a hydrogen-and-argon plasma. This process forms a tantalum-doped ruthenium layer. The patent also describes apparatuses for carrying out the methods.
Career Highlights
Hwang works at Applied Materials, Inc. His patent focuses on materials and processes for forming interconnects in electronic devices.
Collaborations
Hwang’s listed coworker is Muthukumar Kaliappan.
Conclusion
Shinjae Hwang’s patent describes a plasma-based approach to forming tantalum-doped ruthenium interconnect layers, reflecting his work at Applied Materials in electronic-device materials and manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile