Method of forming a metal liner for interconnect structures

Abstract

Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XXIII, wherein R, R', R, R, R, R, and Rare independently selected from hydrogen (H), hydroxy, carbonyl, amino, aminoalkyl, alkyl, alkene, alkyne, and aryl, n is from 0 to 20, m is from 0 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.