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Bhaskar Jyoti Bhuyan

USPTO Granted Patents = 63 (Patent Applications = 46)

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 21(Granted Patents)

Forward Citations (Not Self Cited) = 15(Dec 10, 2025)

Location History:

Mumbai, IN (2016)
San Jose, CA (US) (2018 - 2024)
Milpitas, CA (US) (2023 - 2024)

Company Filing History:

63 out of 13,713

Applied Materials, Inc.

patents

2 out of 806

National University of Singapore

patents

1 out of 580

Wayne State University

patents

where one patent can have more than one assignee

Years Active: 2016-2025

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Areas of Expertise:

Molybdenum Precursors

Thin Film Deposition

Area-Selective Deposition

Atomic Layer Deposition

Semiconductor Integration Films

Selective Etch

Molecular Layer Deposition

Chalcogen Precursors

MicroLED Features

Carbon-Based Films

Dielectric Deposition

Low-K Films

63 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12500080 - Systems and methods for depositing low-K dielectric films (2025-12-16),

2. 12473316 - Molybdenum (0) precursors for deposition of molybdenum films (2025-11-18),

3. 12438050 - Electronic device fabrication using area-selective deposition (2025-10-07),

4. 12435411 - Metal organonitrile precursors for thin film deposition (2025-10-07),

5. 12415824 - Molybdenum(0) precursors for deposition of molybdenum films (2025-09-16),

6. 12334394 - Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal (2025-06-17),

7. 12300491 - Deposition of semiconductor integration films (2025-05-13),

8. 12291779 - Methods of selective atomic layer deposition (2025-05-06),

9. 12281382 - Methods for depositing blocking layers on conductive surfaces (2025-04-21),

10. 12272551 - Selective metal removal with flowable polymer (2025-04-08),

11. 12261049 - Selective etch of a substrate (2025-03-25),

12. 12142477 - Chalcogen precursors for deposition of silicon nitride (2024-11-12),

13. 12131900 - Methods for depositing blocking layers on metal surfaces (2024-10-29),

14. 12110584 - Low temperature growth of transition metal chalcogenides (2024-10-08),

15. 12094766 - Selective blocking of metal surfaces using bifunctional self-assembled monolayers (2024-09-17),

Title: The Innovative World of Inventor Bhaskar Jyoti Bhuyan

Introduction:

Bhaskar Jyoti Bhuyan is a prolific inventor based in San Jose, CA (US) known for his groundbreaking work in the field of materials science and microLED technology. With an impressive portfolio of 47 patents, Bhuyan has consistently pushed the boundaries of innovation.

Latest Patents:

1. Molybdenum (0) Precursors for Deposition of Molybdenum Films: Bhuyan's patent involves the use of molybdenum(0) coordination complexes to deposit molybdenum-containing films on substrates. This process enables the formation of various molybdenum-based compounds like oxides, carbides, and silicides.

2. Preclean and Encapsulation of MicroLED Features: This patent focuses on a method for cleaning and encapsulating microLED features, enhancing their crystallinity and efficiency. The process includes both wet and dry cleaning techniques for optimal performance.

Career Highlights:

Bhaskar Jyoti Bhuyan has made significant contributions during his tenure at renowned institutions such as Applied Materials, Inc., and the National University of Singapore. His expertise and dedication have led to the advancement of cutting-edge technologies in the semiconductor industry.

Collaborations:

Throughout his career, Bhuyan has collaborated with esteemed professionals like Mark Joseph Saly and Thomas Knisley. These partnerships have fostered an environment of innovation and knowledge exchange, further establishing Bhuyan as a respected figure in his field.

Conclusion:

Inventor Bhaskar Jyoti Bhuyan's remarkable journey is a testament to his passion for innovation and his relentless pursuit of excellence. His pioneering work in materials science and microLED technology continues to shape the future of technological advancement, inspiring the next generation of inventors and researchers worldwide.

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