Methods of forming conformal silicon oxycarbonitride thin films on high aspect ratio semiconductor structures

Abstract

Methods of depositing high-quality conformal silicon oxycarbonitride (SiOCN) films in the formation of semiconductor devices are described. The methods include a first deposition cycle comprising exposing a semiconductor substrate in a semiconductor processing chamber to a first precursor, a first purge gas, a second precursor, and a second purge gas to deposit a conformal silicon carbonitride (SiCN) film, wherein the first precursor is a silicon- and carbon-containing precursor, and the second precursor comprises one or more of ammonia (NH), a diamine (NH—R—NHwherein R is an alkyl group), hydrazine (NH), and diazene (NH). The conformal silicon carbonitride (SiCN) film is then oxidized to form a conformal silicon oxycarbonitride (SiOCN) film, and the conformal silicon oxycarbonitride (SiOCN) film is thermally annealed to form a high-quality conformal silicon oxycarbonitride (SiOCN) film.