Singapore, Singapore

Yuye Kang

This inventor holds 1 USPTO granted patent. Top assignees: Applied Materials, Inc., National University of Singapore. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuye Kang. Retrieved from https://idiyas.com/inventor/yuye-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuye Kang and Conformal Silicon Oxycarbonitride Films

Introduction

Yuye Kang is an inventor associated with Singapore and has worked with Applied Materials, Inc. and the National University of Singapore. His patent work addresses thin-film processes for semiconductor manufacturing.

Latest Patents

Kang is associated with 1 patent, titled “Methods of Forming Conformal Silicon Oxycarbonitride Thin Films on High Aspect Ratio Semiconductor Structures.” The invention describes a process for producing high-quality, conformal silicon oxycarbonitride (SiOCN) films on semiconductor structures with high aspect ratios.

The method first deposits a conformal silicon carbonitride (SiCN) film through sequential exposures to silicon- and carbon-containing and nitrogen-containing precursors, with purge steps between exposures. The deposited film is then oxidized to form SiOCN and thermally annealed to improve its quality. The approach is designed for forming semiconductor devices with conformal films across complex structures.

Career Highlights

Kang’s listed professional affiliations include Applied Materials, Inc., a company involved in semiconductor manufacturing technologies, and the National University of Singapore. His patent reflects work on materials and deposition methods relevant to semiconductor fabrication.

Collaborations

Kang’s listed coworker is Xinke Wang. Their association is connected with the patent on conformal SiOCN thin films.

Conclusion

Yuye Kang’s patent focuses on a deposition, oxidation, and annealing process for producing high-quality conformal SiOCN films, contributing to methods used in advanced semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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