The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jul. 25, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Xinke Wang, Singapore, SG;
Zeqing Shen, San Jose, CA (US);
Susmit Singha Roy, Campbell, CA (US);
Abhijit Basu Mallick, Sunnyvale, CA (US);
Bhaskar Jyoti Bhuyan, San Jose, CA (US);
Jiecong Tang, Singapore, SG;
John Sudijono, Singapore, SG;
Mark Saly, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.