Applied Materials, Inc.

National University of Singapore

Wayne State University

Bhaskar Jyoti Bhuyan

Mark Joseph Saly

Thomas Knisley

Lakmal Charidu Kalutarage

David P Thompson

David Michael Thompson

Abhijit Basu Mallick

Feng Quan Liu

John Leonard Sudijono

Susmit Singha Roy

Ning Li

Mihaela A Balseanu

Doreen Wei Ying Yong

Regina Germanie Freed

Madhur Sachan

Aaron Dangerfield

Zeqing Shen

Andrea Leoncini

Li-Qun Xia

Liqi Wu

Muthukumar Kaliappan

Kelvin Chan

Michael G Haverty

Cong Trinh

Han Vinh Huynh

Paul Mehlmann

Nemanja Dordevic

Chandan Kr Barik

Chandan Das

Zhelin Sun

Jeffrey W Anthis

Mingwei Zhu

Xiangjin Xie

Tobin Kaufman-Osborn

Bo Qi

Kevin Kashefi

Yong Xin Wang

Lisa J Enman

Keenan Navarre Woods

Wenyi Liu

Shuaidi Zhang

Kurt Fredrickson

Drew Phillips

Xinke Wang

Michael L McSwiney

Zachary J Devereaux

Richard Ming Wah Wong

Yingqian Chen

Michael Patrick Chudzik

Xianmin Tang

Pramit Manna

Rongjun Wang

Hung Phi Nguyen

Roger Allan Quon

Mandyam Sriram

Suketu Arun Parikh

Joseph R Johnson

Charles H Winter

Eswaranand Venkatasubramanian

Jiang Lu

Jie Zhang

Keiichi Tanaka

Yijun Liu

Raghav Sreenivasan

William John Durand

Maribel Maldonado-Garcia

Aixi Zhang

Zhimin Qi

Wei Dou

Andrew Short

Jiecong Tang

Rana Howlader

Ahbijit Basu Mallick

Eugene Yu Jin Kong

Jesus Candelario Mendoza

James Hugh Connolly

Anil Kumar Tummanapelli

Shalini Tripathi

Lin Yang

Michael Haverty

Anshita Gairola

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum (0) precursors for deposition of molybdenum films

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Metal complexes with nitrile ligands of the type MOXL, where M is molybdenum or tungsten, X is a halogen, each L is independently an organonitrile ligand with the general formula NCR, where each R is independently a C2-C18 group. Metal complexes with dinitrile bidentate ligands of the type MOXL', where L′ is a dintrile ligand, and dinitrile bridging ligands of the type (MOX)L′, where L′ is a dinitrile bridging ligand connecting the two metal atoms. Methods of making and using the metal complexes are described.

Metal organonitrile precursors for thin film deposition

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H) or ammonia (NH) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

Deposition of semiconductor integration films

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Methods of selective atomic layer deposition

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Methods for depositing blocking layers on conductive surfaces

Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Selective metal removal with flowable polymer

Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

Selective etch of a substrate

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SiN) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SiN) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Chalcogen precursors for deposition of silicon nitride

Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

Methods for depositing blocking layers on metal surfaces

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Low temperature growth of transition metal chalcogenides

Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Selective blocking of metal surfaces using bifunctional self-assembled monolayers

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Vapor phase thermal etch solutions for metal oxo photoresists

Growing community of inventors

San Jose, CA, United States of America

Bhaskar Jyoti Bhuyan