The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Apr. 01, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Feng Chen, San Jose, CA (US);
Yufei Hu, Santa Clara, CA (US);
Wenjing Xu, Santa Clara, CA (US);
Gang Shen, Santa Clara, CA (US);
Zhiyuan Wu, San Jose, CA (US);
Tae Hong Ha, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76852 (2013.01); H01L 21/28568 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.