The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Nov. 30, 2012
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Annamalai Lakshmanan, Fremont, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Mei Chang, Saratoga, CA (US);
Jennifer Shan, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/28562 (2013.01); H01L 21/76846 (2013.01); H01L 21/76862 (2013.01); H01L 21/76864 (2013.01); H01L 23/5384 (2013.01); H01L 23/53238 (2013.01); H01L 21/76831 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.