San Jose, CA, United States of America

Jennifer Shan

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Innovator Spotlight: Jennifer Shan - Pioneering Copper Barrier Solutions

Introduction: Jennifer Shan, a distinguished inventor based in San Jose, CA, has made significant contributions to the field of materials science with her groundbreaking work on doped tantalum nitride for copper barrier applications.

Latest Patents: Jennifer Shan holds a patent for doped tantalum nitride films, which enhance the copper barrier properties of the material. By doping TaN films with elements such as Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti, and V, she has advanced the industry's capability to create more efficient copper barriers.

Career Highlights: Currently employed at Applied Materials, Inc., Jennifer Shan continues to drive innovation in the semiconductor industry. Her expertise in materials engineering has led to the development of cutting-edge solutions for challenging technological problems.

Collaborations: In her work, Jennifer Shan has collaborated closely with talented individuals such as Annamalai Lakshmanan and Paul F. Ma. Together, they have pushed the boundaries of materials science and paved the way for new advancements in copper barrier technology.

Conclusion: Jennifer Shan's work in developing doped tantalum nitride films for copper barrier applications showcases her dedication to innovation and excellence in materials engineering. Her patents and collaborations underscore her role as a trailblazer in the field, shaping the future of semiconductor technology.

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