Pomona, CA, United States of America

Mei Yin Chang

This inventor holds 228 USPTO granted patents and 30 published patent applications and 3 EPO patents, primarily in Chemical Vapor Deposition (CPC class 118725). Top assignees: Applied Materials, Inc., Micron Technology Incorporated, University of California. Active years: 1989-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mei Yin Chang. Retrieved from https://idiyas.com/inventor/mei-yin-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 228 

% Patents Active = 79.4

 

Average Co-Inventor Count = 4.4

ph-index = 52

Forward Citations = 15,782(Granted Patents)

Forward Citations (Not Self Cited) = 15,167(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (1989 - 2000)
  • Cupertino, CA (US) (1989 - 2001)
  • Pomona, CA (US) (2007)
  • Saragoga, CA (US) (2008 - 2014)
  • Sunnyvale, CA (US) (2017)
  • Santa Clara, CA (US) (2023)
  • Saratoga, CA (US) (1998 - 2024)

Company Filing History:


Years Active: 1989-2026

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Areas of Expertise:
Titanium Selectivity
Tungsten Deposition
Metal Film Techniques
Chemical Vapor Deposition
Atomic Layer Deposition
Thin Film Coatings
High Aspect Ratio Features
Sputtering Methods
Cobalt Films
Iridium Films
Gas Flow Uniformity
Precursor Removal
228 patents (USPTO):Explore Patents

Title: Mei Chang: An Innovator Shaping the Semiconductor Industry

Introduction:

With a remarkable portfolio comprising 221 patents, Mei Chang has established himself as a prominent figure in the innovation landscape. Hailing from Saratoga, CA, Mei Chang's groundbreaking work in the field of semiconductors has made a significant impact on various industries. This article delves into his latest patents, career highlights, collaborations, and the lasting influence of his inventions.

Latest Patents:

Mei Chang's latest patents include two pioneering inventions: "Apparatuses and Methods of Protecting Nickel and Nickel Containing Components with Thin Films" and "Low Temperature Deposition of Iridium Containing Films." The former patent focuses on the development of a method for depositing a protective aluminum-containing layer on nickel or nickel alloy components of semiconductor manufacturing apparatuses. This groundbreaking method ensures enhanced durability and longevity of such components. The latter patent introduces innovative processing methods for forming iridium-containing films at lower temperatures, paving the way for more energy-efficient and cost-effective semiconductor manufacturing processes.

Career Highlights:

Mei Chang has made immense contributions to the semiconductor industry throughout his career with two notable affiliations. He has worked at Applied Materials, Inc, a leading global provider of equipment, services, and software solutions for semiconductor and display manufacturing. Mei Chang's expertise has also been recognized by Applied Materials Gmbh, a subsidiary of Applied Materials, Inc, which specializes in providing comprehensive semiconductor manufacturing solutions in Europe.

Collaborations:

Driven by a collaborative spirit, Mei Chang has collaborated with several esteemed professionals to further advance the frontiers of innovation. Among his notable colleagues are Ling Chen and Chien-Teh Kao, who have made significant contributions to the semiconductor industry alongside Mei Chang. These partnerships have fostered the exchange of knowledge and ideas, leading to breakthrough inventions and pioneering technologies.

Conclusion:

Mei Chang's incredible track record of 221 patents speaks volumes about his expertise and dedication in the field of semiconductors. His inventions, particularly in the realm of protective coatings and low-temperature deposition techniques, have propelled the semiconductor industry forward in terms of efficiency, reliability, and sustainability. By collaborating with other exceptional innovators, Mei Chang continues to shape the future of semiconductor manufacturing, leaving an indelible mark on the industry and inspiring generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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