The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Dec. 05, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Takashi Kuratomi, San Jose, CA (US);

I-Cheng Chen, San Jose, CA (US);

Avgerinos V. Gelatos, Scotts Valley, CA (US);

Pingyan Lei, San Jose, CA (US);

Mei Chang, Saratoga, CA (US);

Xianmin Tang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01); H01J 37/32 (2006.01); C23C 16/42 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); C23C 16/42 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3321 (2013.01); H01L 21/67248 (2013.01);
Abstract

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl), hydrogen (H) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.


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