Applied Materials, Inc.

Other

Micron Technology Incorporated

University of California

Appled Materials, Inc.

Mei Yin Chang

Ling Chen

Chien-Teh Kao

Dien-Yeh Wu

Seshadri Ganguli

Xinliang Lu

Hua Chung

Ashok K Sinha

Paul F Ma

Avgerinos V Gelatos

Lawrence C Lei

David P Thompson

Srinivas Gandikota

Alfred W Mak

Vincent W Ku

David N Wang

Ming Xi

Christophe Marcadal

Karl Anthony Littau

Xinyu Fu

Feng Quan Liu

Jeffrey W Anthis

Joseph Yudovsky

Dan Maydan

Bo Zheng

Ilya Perlov

Wei V Tang

Yu Wen Chang

Gurtej S Sandhu

John M White

Sujit Sharan

Xianmin Tang

Michal Danek

Avi Tepman

Jun Zhao

Yu Lei

Roderick Craig Mosely

David K Cheng

Maitreyee Mahajani

Sang Ho Yu

Joshua Collins

Steve G Ghanayem

Xiaoxiong Yuan

Lee Luo

Semyon Sherstinsky

Michael Xiaoxuan Yang

Wei W Wang

Sasson Roger Somekh

Schubert S Chu

Jeong Soo Byun

Andrew C Kummel

Kai Wu

Charles N Dornfest

Kazuya Daito

Kenneth S Collins

John C Forster

Naomi Yoshida

Adolph Miller Allen

Joseph F AuBuchon

Yi Xu

Nitin K Ingle

Hoon Sik Kim

Khaled Ahmed

Eric Andrew Englhardt

Arvind Sundarrajan

Yixiong Yang

Jaim Nulman

Patricia M Liu

Joung Joo Lee

Li-Qun Xia

Jennifer Y Sun

Rajeev Bajaj

Ivo Johannes Raaijmakers

Deenesh Padhi

Muhammad M Rasheed

Visweswaren Sivaramakrishnan

Kirankumar Neelasandra Savandaiah

Rongjun Wang

Hichem M'Saad

Mihaela A Balseanu

Zheng Yuan

Kam S Law

He Ren

Michael Santiago Cox

Lara Hawrylchak

Fusen E Chen

Tza-Jing Gung

Gary Fong

Salvador P Umotoy

Wei Chih Chen

Derek R Witty

Dale Robert Du Bois

Yi Zheng

Martin Jeffrey Salinas

Xin Sheng Guo

Hyman J Levinstein

Virendra V Rana

Gongda Yao

Chen-An Chen

Jacqueline S Wrench

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl), hydrogen (H) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WClor WCl.

Methods for depositing fluorine/carbon-free conformal tungsten

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Apparatuses and methods of protecting nickel and nickel containing components with thin films

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

Apparatus for increasing flux from an ampoule

Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Substrate processing chamber having heated showerhead assembly

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

Method for forming a hydrophobic and icephobic coating

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl), hydrogen (H) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Method for forming a metal gapfill

Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

Water assisted highly pure ruthenium thin film deposition

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Apparatus for depositing metal films with plasma treatment

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

Growing community of inventors

Pomona, CA, United States of America

Mei Yin Chang