The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Apr. 14, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Haoming Yan, Santa Clara, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Mandyam Sriram, San Jose, CA (US);
Eunkee Hong, Santa Clara, CA (US);
Janardhan Devrajan, Santa Clara, CA (US);
Lakmal C. Kalutarage, San Jose, CA (US);
Yongjing Lin, San Jose, CA (US);
Lisa Michelle Mandrell, Santa Clara, CA (US);
Arkaprava Dan, San Jose, CA (US);
Liqi Wu, San Jose, CA (US);
Pratham Jain, Santa Clara, CA (US);
Jeffrey Anthis, San Jose, CA (US);
Mark Saly, Santa Clara, CA (US);
Mei Chang, Saratoga, CA (US);
David Thompson, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.