The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Mar. 27, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Feng Q. Liu, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Schubert Chu, San Francisco, CA (US);
Mei Chang, Saratoga, CA (US);
Jeffrey W. Anthis, San Jose, CA (US);
David Thompson, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/42 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); C23C 16/507 (2006.01); C23C 16/513 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/42 (2013.01); C23C 16/14 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/507 (2013.01); C23C 16/513 (2013.01); C23C 16/52 (2013.01);
Abstract
Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.