The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Dec. 29, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Feng Q. Liu, San Jose, CA (US);
Mark Saly, Santa Clara, CA (US);
David Thompson, San Jose, CA (US);
Annamalai Lakshmanan, Fremont, CA (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
Joung Joo Lee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI, where R is one or more of a C-Calkyl, C-Ccycloalkyl, C-Calkenyl, or C-Calkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.