The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Jul. 09, 2004
Annamalai Lakshmanan, Santa Clara, CA (US);
Albert Lee, Cupertino, CA (US);
Ju-hyung Lee, San Jose, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Annamalai Lakshmanan, Santa Clara, CA (US);
Albert Lee, Cupertino, CA (US);
Ju-Hyung Lee, San Jose, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprising a reducing agent, an oxygen containing compound, and an organosilicon compound, into the processing chamber, generating a plasma from a dual frequency RF power source, and depositing a dielectric material comprising silicon, carbon, and oxygen. The dielectric material may be used as an etch stop, an anti-reflective coating, or a passivation layer.