Salil Mujumdar

Title: Salil Mujumdar: Innovator in Metal Gate Work Function Materials

Introduction

Salil Mujumdar is a prominent inventor based in San Jose, California, known for his significant contributions to the field of semiconductor technology. With a total of four patents to his name, Mujumdar has made strides in the development of materials and processes that enhance the performance of metal-oxide-semiconductor (MOS) devices.

Latest Patents

Mujumdar's latest patents focus on the atomic layer deposition of HfAlC as a metal gate work function material in MOS devices. His work involves the use of hafnium chloride (HfCl) and Trimethylaluminum (TMA) precursors to create HfAlC films. These films can be combined with post-deposition anneal processes and ALD liners to control device characteristics in high-k metal-gate devices. By varying the HfCl pulse time, he can control the aluminum incorporation in the HfAlC film within a range of 10-13%. His research also quantifies the effective work function (EWF) in metal oxide semiconductor capacitor (MOSCAP) devices, demonstrating that HfAlC is a promising material for tuning device threshold voltages in anticipated multi-V integrated circuit (IC) devices.

Career Highlights

Throughout his career, Salil Mujumdar has worked with notable companies such as GlobalFoundries Inc. and Intermolecular, Inc. His expertise in semiconductor materials and processes has positioned him as a key player in the industry, contributing to advancements in CMOS applications and products.

Collaborations

Mujumdar has collaborated with esteemed colleagues, including Amol Ramesh Joshi and Kisik Choi, to further his research and development efforts in semiconductor technology.

Conclusion

Salil Mujumdar's innovative work in the field of metal gate work function materials has made a significant impact on the semiconductor industry. His patents and collaborations reflect his commitment to advancing technology and improving device performance.