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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9224644 B1

PDFFull Text
Expired
Date of Patent:
Dec. 29, 2015

Filed:

Dec. 26, 2012

Method to control depth profiles of dopants using a remote plasma source

Applicant:

Intermolecular, Inc., San Jose, CA (US);

Inventors:

Sandip Niyogi, San Jose, CA (US);

Amol Joshi, Sunnyvale, CA (US);

Chi-I Lang, Cupertino, CA (US);

Salil Mujumdar, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 14/58 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01L 21/3215 (2006.01); H01J 37/32 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); C23C 14/5826 (2013.01); C23C 16/45536 (2013.01); H01J 37/32357 (2013.01); H01L 21/022 (2013.01); H01L 21/0234 (2013.01); H01L 21/02181 (2013.01); H01L 21/02323 (2013.01); H01L 21/02332 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28202 (2013.01); H01L 21/31155 (2013.01); H01L 21/3215 (2013.01); H01L 21/67207 (2013.01); H01L 21/68764 (2013.01); H01L 21/68792 (2013.01); H01L 29/517 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01);
Abstract

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Find Patent Forward Citations

Niyogi, Sandip. (2015). Method to control depth profiles of dopants using a remote plasma source (U.S. Patent No. 9224644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9224644

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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