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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9178031 B1

PDFFull Text
Expired
Date of Patent:
Nov. 03, 2015

Filed:

Jun. 10, 2014

Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics

Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventor:

Jinhong Tong, Santa Clara, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/512 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02192 (2013.01); H01L 21/28194 (2013.01); H01L 29/517 (2013.01); H01L 29/4966 (2013.01); H01L 29/78 (2013.01);
Abstract

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

Find Patent Forward Citations

Tong, Jinhong. (2015). Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics (U.S. Patent No. 9178031). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9178031

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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