The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 16, 2015
Intermolecular Inc., San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Sandisk 3d Llc, Milpitas, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Tony P. Chiang, Campbell, CA (US);
Tim Minvielle, San Jose, CA (US);
Takeshi Yamaguchi, Kanagawa, JP;
Intermolecular, Inc., San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.