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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11522131 B1

PDFFull Text
Date of Patent:
Dec. 06, 2022

Filed:

Jul. 31, 2020

Resistive memory device and methods of making such a resistive memory device

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Wanbing Yi, Singapore, SG;

Benfu Lin, Singapore, SG;

Cing Gie Lim, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:

GLOBALFOUNDRIES SINGAPORE PTE LTD, Singapore, SG;

Attorneys:

Yee Tze Lim

Hoffman Warnick LLC

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/306 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 21/30625 (2013.01); H01L 27/24 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01);
Abstract

An illustrative device disclosed herein includes a bottom electrode, a conformal switching layer positioned above the bottom electrode and a top electrode positioned above the conformal switching layer. The top electrode includes a conformal layer of conductive material positioned above the conformal switching layer and a conductive material positioned above the conformal layer of conductive material.

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Hsieh, Curtis Chun-I. (2022). Resistive memory device and methods of making such a resistive memory device (U.S. Patent No. 11522131). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11522131

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