The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jun. 24, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Kai Kang, Singapore, SG;

Yi Jiang, Singapore, SG;

Curtis Chun-I Hsieh, Singapore, SG;

Wanbing Yi, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/283 (2006.01); H01L 49/02 (2006.01); H01L 45/00 (2006.01); G11C 5/06 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); G11C 5/06 (2013.01); H01L 21/283 (2013.01); H01L 23/5226 (2013.01); H01L 28/20 (2013.01); H01L 43/12 (2013.01); H01L 45/16 (2013.01); H01L 27/222 (2013.01); H01L 27/24 (2013.01);
Abstract

A semiconductor device may be provided, including a base layer, an insulating layer arranged over the base layer, a memory structure arranged at least partially within the insulating layer, where the memory structure may include a first electrode, a second electrode, and an intermediate element between the first electrode and the second electrode, and a resistor arranged at least partially within the insulating layer, where the resistor may be arranged in substantially a same horizontal plane with one of the first electrode and the second electrode.


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